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BC846
BC847
BC848



NPN Silicon Planar Epitaxial Transistors



Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR

3



1


2




Unit: inch (mm)

SOT-23 SMD Package




Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

DESCRIPTION SYMBOL BC846 BC847 BC848 UNITS
Collector Base Voltage VCBO 80 50 30 V
Collector Emmitter Voltage (VBE = 0V) VCES 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 6 5 V
Collector Current (DC) IC 100
mA
Collector Current - Peak ICM 200
Emitter Current - Peak -IEM 200 mA
Base Current - Peak IBM 200 mA
Total power dissipation up to
Ptot** 250 mW
Tamb = 25 oC
o
Storge Temperature Tstg -55 to +150 C
o
Junction Temperature Tj 150 C
Thermal Resistance
From junction to ambient Rth(j-a)** 500 K/W
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm




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BC846
BC847
BC848



o
Electrical Characteristics (at Ta=25 C unless otherwise specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector Cut Off Current VCB = 30V, IE = 0 15 nA
ICBO o
VCB = 30V, IE = 0, Tj = 150 C 4 uA
Base Emitter On Voltage IC = 2mA, VCE = 5V 0.58 0.7
VBE(on)* V
IC = 10mA, VCE = 5V 0.77
Collector Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25
VCE(Sat) V
IC = 100mA, IB = 5mA 0.60
Base Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.7
VBE(Sat)*** V
IC = 100mA, IB = 5mA 0.9
DC Current Gain hFE IC = 10uA, VCE = 5V
BC846A/BC847A/BC848A 90
BC846B/BC847B/BC848B 150
BC847C/BC848C 270

IC = 2mA, VCE = 5V
BC846 110 450
BC847/BC848 110 800
BC846A/BC847A/BC848A 110 220
BC846B/BC847B/BC848B 200 450
BC847C/BC848C 420 800
Collector Capacitance CC IE = ie = 0, VCB = 10V, f = 1MHZ 2.5 pF
Transition Frequency fT IC = 10mA, VCB = 5V, f = 100MHZ 100 MHZ
Small Signal Current Gain | hfe | IC = 2mA, VCE = 5V, f= 1kHZ
BC856 125 500
BC857/BC858 125 900
BC846A/BC847A/BC848A 125 260
BC846B/BC847B/BC848B 240 500
BC847C/BC848C 450 900
Noise Figure NF IC = 0.2mA, VCE = 5V 10 dB
RS= 2k ohm, f = 1KHZ, B= 200HZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.




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