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STH6N100
STH6N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STH6N100 1000 V <2 6A
STH6N100FI 1000 V <2 3.7 A

s TYPICAL RDS(on) = 1.75
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC 3 3
s LOW INPUT CAPACITANCE 2 2
1 1
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION TO-218 ISOWATT218
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STH6N100 STH6N100
V DS Drain-source Voltage (V GS = 0) 1000 V
V DGR Drain- gate Voltage (R GS = 20 k) 1000 V
V GS Gate-source Voltage