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BC857BV
SOT-563 Dual Transistor (PNP)
SOT-563
1.600
Features 1.200 1.600
Epitaxial Die Construction
Complementary NPN Types Available 0.220
(BC847BV) 0.500
Ultra-Small Surface Mount Package
0.565
Marking: K5V
MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 0.15 W
RJA Thermal Resistance. Junction to Ambient Air 833 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-1A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA
DC current gain hFE VCE=-5V,IC=-2mA 220 475
VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.1 V
Collector-emitter saturation voltage
VCE(sat)(2) IC=-100mA,IB=-5mA -0.4 V
VBE(sat)(1) IC=-10mA,IB=-0.5mA -0.7 V
Base-emitter saturation voltage
VBE(sat)(2) IC=-100mA,IB=-5mA -0.9 V
VBE(1) VCE=-5V,IC=-2mA -0.6 -0.75 V
Base-emitter voltage
VBE(2) VCE=-5V,IC=-10mA -0.82 V
Transition frequency fT VCE=-5V,IC=-10mA,f=100MHz 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF
VCE=-5V,Ic=-0.2mA,
Noise figure NF 10 dB
f=1kHZ,Rs=2K,BW=200Hz
BC857BV
SOT-563 Dual Transistor (PNP)
Typical Characteristics