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C1815
NPN Plastic-Encapsulate Transistors
P b Lead(Pb)-Free

TO--92
FEATURES 1.EMITTER
Power dissipation
2.COLLECTOR
MAXIMUM RATINGS* TA=25 unless otherwise noted
3.BASE
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
1 2 3
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PD Total Device Dissipation 400 mW
TJ, Tstg Junction and Storage Temperature -55-150
*These ratings are limiting values above which the serviceability
of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V

Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 uA

Collector cut-off current ICEO VCE= 50 V, IB=0 0.1 uA

Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 uA

DC current gain hFE(1) VCE= 6 V, IC= 2mA 70 700

Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V

Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V
VCE= 10 V, IC= 1mA
Transition frequency fT 80 MHz
f=30MHz
VCB=10V,IE=0
Collector Output Capacitance Cob 3.5 pF
f=1MHZ
VCE= 6 V, IC=0.1 mA
Noise Figure NF 10 dB
f =1KHz,RG=10K

CLASSIFICATION OF hFE(1)
Rank O Y GR BL

Range 70-140 120-240 200-400 350-700

WEITRON 1/2 23-Nov-06
http://www.weitron.com.tw
C1815
Typical Characteristics

WEITRON 2/2 23-Nov-06
http://www.weitron.com.tw