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STW47NM60
N-CHANNEL 600V - 0.075 - 47A TO-247
MDmeshTMPower MOSFET
ADVANCED DATA
TYPE VDSS RDS(on) Rds(on)*Qg ID
STW47NM60 600V < 0.09 7.2 *nC 47 A
TYPICAL RDS(on) = 0.075
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE 3
2
LOW GATE INPUT RESISTANCE 1
TIGHT PROCESS CONTROL AND HIGH
TO-247
MANUFACTURING YIELDS
DESCRIPTION
This improved version of MDmeshTM which is based
on Multiple Drain process represents the new
benchmark in high voltage MOSFETs. The resulting
product exhibits even lower on-resistance, impres- INTERNAL SCHEMATIC DIAGRAM
sively high dv/dt and excellent avalanche character-
istics. The adoption of the Company's proprietary
strip technique yields overall performances that are
significantly better than that of similar competition's
products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage