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DTD743ZE / DTD743ZM
Transistors
200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD743ZE / DTD743ZM
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
DTD743ZE 0.7
1.6
0.3 0.55
Feature
(3)
1) VCE(sat) is lower than conventional products.
0.8
1.6
2) Built-in bias resistors enable the configuration of an (2) (1)
0.1Min.
0.2 0.2
inverter circuit without connecting external input 0.5 0.5
0.15 (1) GND
(2) IN
resistors (see equivalent circuit). EMT3 1.0
(3) OUT
JEITA No. (SC-75A)
3) The bias resistors consist of thin-film resistors with JEDEC No. Each lead has same dimensions
complete isolation to allow negative biasing of the Abbreviated symbol : P23
input. They also have the advantage of almost
DTD743ZM
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for 1.2
0.32
0.2
operation, making the device design easy. (3)
0.8
1.2
(1)(2)
0.22
(1) IN
0.2
0.13
Structure 0.4 0.4 0.5 (2) GND
0.8
NPN epitaxial plannar silicon transistor (3) OUT
VMT3
(Resistor built-in type) Each lead has same dimensions
Abbreviated symbol : P23
Absolute maximum ratings (Ta=25