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SEMICONDUCTOR KTC9016S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Small Reverse Transfer Capacitance A _
2.93 + 0.20
: Cre=0.65pF(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
D
Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. 2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
CHARACTERISTIC SYMBOL RATING UNIT P 7
N
C
J
Collector-Base Voltage VCBO 40 V M
K
Collector-Emitter Voltage VCEO 30 V
1. EMITTER
Emitter-Base Voltage VEBO 4 V 2. BASE
IC 3. COLLECTOR
Collector Current 20 mA
Emitter Current IE -20 mA
Collector Power Dissipation PC * 350 mW
SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=1mA 54 - 198
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 - - 1.0 pF
Transition Frequency fT VCE=6V, IC=1mA, f=200MHz 260 - - MHz
Collector-Base Time Constant CC rbb' VCE=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF - 2.2 4.0 dB
VCE=6V, IE=-1mA, f=100MHz
Power Gain Gpe 15 - - dB
Note) hFE Classification F:54 80, G:72 108, H:97 146, I:130 198
2003. 3. 25 Revision No : 1 1/3
KTC9016S
STATIC CHARACTERISTICS h FE - I C
300
20 500 COMMON EMITTER
COLLECTOR CURRENT
450
400 VCE =6V
DC CURRENT GAIN h FE
16 350
300 Ta=25 C
I C (mA)
250 100
12
VCE =6V 200
8 150
100 50
4 I B =50