Text preview for : 2sd862.pdf part of WingShing 2sd862 . Electronic Components Datasheets Active components Transistors WingShing 2sd862.pdf
Back to : 2sd862.pdf | Home
2SD862 Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, Low Vce(sat) middle
power transistors in a plastic envelope, primarily for
use in audio and general purpose
QUICK REFERENCE DATA TO-126
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 20 V
VCEO Collector-emitter voltage (open base) - 20 V
IC Collector current (DC) - 2 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 10 W
VCEsat Collector-emitter saturation voltage IC = 1.5A; IB = 0.15A - 0.5 V
VF Diode forward voltage IF = 1.5A 1.5 2.0 V
tf Fall time - s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 20 V
VCEO Collector-emitter voltage (open base) - 20 V
VEBO Emitter-base oltage (open colloctor) 6 V
IC Collector current (DC) - 2 A
IB Base current (DC) - 0.5 A
Ptot Total power dissipation Tmb 25 - 10 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO Collector-base cut-off current VCB=20V - 0.1 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 20 V
VCEsat Collector-emitter saturation voltages IC = 1.5A; IB = 0.15A - 0.5 V
hFE DC current gain IC = 100mA; VCE = 2V 60 400
fT Transition frequency at f = 5MHz IC = 0.5A; VCE = 12V 80 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 75 - pF
ton On times us
ts Tum-off storage time us
tf Fall time us
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]