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PZT2222A
SOT-223 Transistor(NPN)
1. BASE
SOT-223
2. COLLECTOR
1 3. EMITTER

Features
Epitaxial planar die construction
Complementary PNP Type available (PZT2907A)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA Dimensions in inches and (millimeters)
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10 A,IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 10 nA
Collector cut-off current ICEX VCE=60V,VBE(off)=3V 10 nA
Emitter cut-off current IEBO VEB= 3V , IC=0 10 nA
hFE(1) VCE=10V, IC= 0.1mA 35
hFE(2) VCE=10V, IC= 1mA 50
hFE(3) VCE=10V, IC= 10mA 75
DC current gain
hFE(4) VCE=10V, IC= 150mA 100 300
hFE(5) VCE=1V, IC= 150mA 50
hFE(6) VCE=10V, IC= 500mA 40
VCE(sat) IC=500mA, IB= 50mA 1 V
Collector-emitter saturation voltage
VCE(sat) IC=150mA, IB= 15mA 0.3 V
VBE(sat) IC=500mA, IB= 50mA 2.0 V
Base-emitter saturation voltage
VBE(sat) IC=150mA, IB=15mA 1.2 V
Transition frequency fT VCE=20V,IC= 20mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF
Delay time td VCC=30V, IC=150mA 10 nS
Rise time tr VBE(off)=0.5V,IB1=15mA 25 nS
Storage time tS VCC=30V, IC=150mA 225 nS
Fall time tf IB1=-IB2= 15mA 60 nS
PZT2222A
SOT-223 Transistor(NPN)

Typical characteristics
PZT2222A
SOT-223 Transistor(NPN)