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STK2N80
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STK2N80 800 V < 7 2.1 A

s TYPICAL RDS(on) = 5
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3
s LOW INPUT CAPACITANCE 1
2
3
s LOW GATE CHARGE 2
1
s APPLICATION ORIENTED
CHARACTERIZATION
SOT-82 SOT-194
APPLICATIONS (option)
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VD S Drain-source Voltage (V GS = 0) 800 V
V DG R Drain- gate Voltage (R GS = 20 k) 800 V
V GS Gate-source Voltage