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SEMICONDUCTOR KTC4378
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
A
C
FEATURES
H
High Voltage : VCEO=60V(Min.). G
High Current : IC(Max.)=1A.
B
J
E
High Transition Frequency : fT=150MHz (Typ.).
DIM MILLIMETERS
Wide Area of Safe Operation. A 4.70 MAX
D D B _
2.50 + 0.20
Complementary to KTA1668.
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
1 2 3 H 1.75 MAX
J 0.75 MIN
MAXIMUM RATING (Ta=25 )
K 0.5+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
1. BASE
Collector-Base Voltage VCBO 80 V
2. COLLECTOR (HEAT SINK)
Collector-Emitter Voltage VCEO 60 V 3. EMITTER
Emitter-Base Voltage VEBO 5 V
DC IC 1
Collector Current A SOT-89
Pulse ICP 2
PC 500 mW
Collector Power Dissipation
PC * 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2
Marking
PC* : Package mounted on ceramic substrate (250mm x0.8t)
h FE Rank Lot No.
Type Name
T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 100 nA
hFE(1) VCE=2V, IC=50mA 120 - 320
DC Current Gain
hFE(2) VCE=2V, IC=1A 30 - -
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 60 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
Transition Frequency fT VCE=10V, IC=50mA - 150 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 12 - pF
Note : hFE(1) Classification Y:120 200, GR:160~320
1999. 12. 22 Revision No : 2 1/3
KTC4378
1999. 12. 22 Revision No : 2 2/3
KTC4378
1999. 12. 22 Revision No : 2 3/3