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BCX69
SOT-89 Transistor(PNP)
1. BASE
SOT-89
1 2. COLLECTOR
4.6
2 1.6
4.4
B
1.8
1.4 1.4
3 3. EMITTER
2.6 4.25

Features
2.4 3.75

0.8
MIN
0.53
For general AF applications 0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
High collector current 1.5
3.0
High current gain
Low collector-emitter saturation voltage Dimensions in inches and (millimeters)
Complementary type: BCX68 (NPN)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -25 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Dissipation 0.8 W
TJ Junction Temperature 150
Tstg Storage Temperature -65-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10A , IE=0 -25 V

Collector-emitter breakdown voltage V(BR)CEO IC=-30mA , IB=0 -20 V

Emitter-base breakdown voltage V(BR)EBO IE=-1A, IC=0 -5 V

Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain BCX69 85 375
BCX69-10 1) 85 160
hFE (1) VCE=-1V, IC=-500mA
BCX69-16 100 250
BCX69-25 160 375
hFE(2) 1) VCE=-10V, IC=-5mA 50
1)
hFE(3) VCE=-1V, IC=-1A 60

Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-100mA -0.5 V

1)
IC=-5mA, VCE=-10V -0.6
Base-emitter voltage VBE(ON) V
IC=-1A, VCE=-1V -1
VCE=-5V, IC=-100mA
Transition frequency fT 100 MHz
f=20MHz
1)
Pulse test: t =300