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STL65DN3LLH5
Dual N-channel 30 V, 0.0059 19 A
,
PowerFLATTM(5x6) double island, STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL65DN3LLH5 30 V <0.0065 19 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
PowerFLATTM (5x6)
High avalanche ruggedness Double island
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order code Marking Package Packaging
PowerFLATTM(5x6)
STL65DN3LLH5 65DN3LLH5 Tape and reel
Double island
December 2010 Doc ID 18323 Rev 1 1/12
www.st.com 12
Contents STL65DN3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 18323 Rev 1
STL65DN3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage