php55n03t_2.pdf part of Philips php55n03t 2 php55n03t_2.pdf, . Electronic Components Datasheets Active components Transistors Philips php55n03t

Text preview for : php55n03t_2.pdf part of Philips php55n03t 2 . Electronic Components Datasheets Active components Transistors Philips php55n03t_2.pdf

Back to : php55n03t_2.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHP55N03T
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 30 V
'trench' technology. The device ID Drain current (DC) 55 A
features very low on-state resistance Ptot Total power dissipation 103 W
and has integral zener diodes giving Tj Junction temperature 175