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2SK2608
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII)

2SK2608
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance : RDS (ON) = 3.73 (typ.)
High forward transfer admittance : |Yfs|= 2.6 S (typ.)
Low leakage current : IDSS = 100