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BUT92

FAST-SWITCHING POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s hFE > 10 AT IC =35A
s HIGH EFFICIENCY SWITCHING
s VERY LOW SATURATION VOLTAGE
s RECTANGULAR SAFE OPERATING AREA
s WIDE ACCIDENTAL OVERLOAD AREA

APPLICATIONS
1
s UNINTERRUPTABLE POWER SUPPLY 2
s SWITCH MODE POWER SUPPLIES

s MOTOR CONTROL
TO-3
DESCRIPTION (version "S")
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage (V BE = -1.5 V) 350 V
V CEO Collector-Emitter Voltage (I B = 0) 250 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IE Emitter Current 50 A
I EM Emitter Peak Current 75 A
IB Base Current 10 A
I BM Base Peak Current 15 A
P tot Total Power Dissipation at T case 25 Co
250 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Junction Temperature 200 C

June 1997 1/4
BUT92

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.7 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CEV 0.4 mA
o
Current (R BE = 10 ) V CE = V CEV T c = 100 C 4 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 0.2 mA
Current V CE = V CEV V BE = -1.5V T c = 100 o C 2 mA
I EBO Emitter Cut-off V EB = 7 V 1 mA
Current (I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2 A L = 25 mH 250 V
Sustaining Voltage
V EB0 Emitter-Base Voltage I E = 50 mA 7 V
(IC = 0)
V CE(sat) Collector-Emitter I C = 35 A IB = 3.5 A 0.8 1.2 V
Saturation Voltage I C = 35 A IB = 3.5 A T j = 100 o C 1.25 1.9 V
V BE(sat) Base-Emitter I C = 35 A IB = 3.5 A 1.2 1.5 V
Saturation Voltage I C = 35 A IB = 3.5 A T j = 100 o C 1.2 1.5 V
di C /dt Rated of Rise on-state V CC = 200V I B1 = 5.25 A R C = 0 125 200 A/