Text preview for : tsm1n60l_a07.pdf part of Taiwansemi tsm1n60l a07 . Electronic Components Datasheets Active components Transistors Taiwansemi tsm1n60l_a07.pdf



Back to : tsm1n60l_a07.pdf | Home

TSM1N60L
600V N-Channel Power MOSFET


TO-252 TO-251 PRODUCT SUMMARY
Pin Definition: VDS (V) RDS(on)() ID (A)
1. Gate
600 12 @ VGS =10V 1
2. Drain
3. Source




General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features Block Diagram
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
IDSS and VDS(on) specified at elevated temperature

Ordering Information

Part No. Package Packing
TSM1N60LCP RO TO-252 2.5Kpcs / 13" Reel
N-Channel MOSFET
TSM1N60LCH C5 TO-251 50pcs / Tube



Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS