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BC847BV
Dual NPN Transistors
Elektronische Bauelemente Plastic-Encapsulate Transistors
RoHS Compliant Product SOT-563
FEATURES
.012(0.30) .051(1.30) .002(0.05)
.000(0.00)
* Epitaxial Die Construction .004(0.10) .043(1.10)
* Complementary PNP Type Available
(BC857BV) .022(0.55)
.067(1.70) .018(0.45)
* Ultra-Small Surface Mount Package .059(1.50)
.011(0.27)
.007(0.17)
.067(1.70)
Marking:K4V .059(1.50)
.024(0.60)
7o REF. .021(0.525)
.006(0.16)
.004(0.09)
F
7o RE .
MAXIMUM RATINGS* TA=25. unless otherwise noted Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.1 A
PC Collector Dissipation 0.15 W
o
RJA Thermal Resistance. Junction to Ambient Air 833 C/W
o
TJ Junction Temperature 150 C
o
Tstg Storage Temperature -55-150 C
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10