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UMG3N
General purpose transistors (dual transistors)

SOT-353

FEATURES
Two DTC143T chips in a package
Mounting possible with SOT-353 automatic mounting machines. 1

Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.

Marking: G3
(3) (2) (1)
R1 R1
Equivalent circuit DTr2 DTr1

(4) (5)/(6)

Absolute maximum ratings (Ta=25)

Symbol Parameter LIMITS Unit
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 100 mA
PC Collector Dissipation 150 mW
Tj Junction temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA
DC current gain hFE VCE=5V,IC=1mA 100 600
Collector-emitter saturation voltage VCE(sat) IC=5mA,IB=0.25mA 0.3 V
Transition frequency fT VCE=10V,IE=-5mA, f=100MHz 250 MHz
Input resistor R1 3.29 4.7 6.11 k

1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05