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FMMT591
TRANSISTOR (PNP)
SOT-23
FEATURES
Low equivalent on-resistance
1. BASE
2. EMITTER
Marking :591 3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 500 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -80 V
1
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A
hFE(1) VCE=-5V, IC=-1mA 100
hFE(2) 1 VCE=-5V, IC=-500mA 100 300
DC current gain
hFE(3) 1 VCE=-5V, IC=-1A 80
hFE(4) 1 VCE=-5V, IC=-2A 15
1
VCE(sat)1 IC=-500mA, IB=-50mA -0.3 V
Collector-emitter saturation voltage
1
VCE(sat)2 IC=-1A, IB=-100mA -0.6 V
1
Base-emitter saturation voltage VBE(sat) IC=-1A, IB=-100mA -1.2 V
1
Base-emitter voltage VBE VCE=-5V, IC=-1A -1 V
Transition frequency fT VCE=-10V,IC=-50mA,,f=100MHz 150 MHz
Collector output capacitance Cob VCB=-10V,f=1MHz 10 pF
1
Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.
1
JinYu www.htsemi.com
semiconductor
Date:201/5
FMMT591
Typical characteristics
2
JinYu www.htsemi.com
semiconductor
Date:201/5