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UMA3N
General purpose transistors (dual transistors)

SOT-353
FEATURES
Two DTA143T chips in a package
Mounting cost and area be cut in half
1
Marking: A3

Equivalent circuit

Absolute maximum ratings (Ta=25)

Symbol Parameter Limits Unit
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -100 mA
PC Collector Dissipation 150 mW
Tj Junction temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 A
Emitter cut-off current IEBO VEB=4V,IC=0 - 0.5 A
DC current gain hFE VCE=-5V,IC=-1mA 100 600
Collector-emitter saturation voltage VCE(sat) IC=-5mA,IB=-0.25mA -0.3 V
Transition frequency fT VCE=-10V,IC=-5mA, f=100MHz 250 MHz
Input resistor R1 3.29 4.7 6.11 K

1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05