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KTC4378
SOT-89 Transistor(NPN)
1. BASE
SOT-89
1 2. COLLECTOR
4.6
B
4.4
2 3. EMITTER 1.6
1.8
1.4 1.4
3
Features 2.6 4.25
2.4 3.75
High voltage 0.8
MIN
0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.5
3.0
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=2V,IC=0.05A 100 320
DC current gain
hFE(2) VCE=2V,IC=1A 30
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V,IC=50mA 150 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF
CLASSIFICATION OF hFE(1)
Rank Y GR
Range 100-200 160-320
Marking TY TGR
KTC4378
SOT-89 Transistor(NPN)
Typical Characteristics
KTC4378
SOT-89 Transistor(NPN)