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2SD794/2SD794A
TO-126C Transistor (NPN)
1. EMITTER TO-126C
2. COLLECTOR 3.000
7.800
8.200 1.800 3.400
2.200
123 3. BASE 4.040
4.240
Features 10.800
11.200
2.700
2.900
3.100
3.300
High voltage and Large current capacity
Complementary to 2SB744,2SB744A
1.170 1.300
1.370 1.500
15.300
15.700
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units 0.660
0.860
VCBO Collector-Base Voltage 70 V 2.280 TYP.
0.450
Collector-Emitter Voltage 2SD794 45 4.460 0.600
4.660
VCEO V
2SD794A 60
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100