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A42(NPN)
TO-92 Bipolar Transistors
1. EMITTER
TO-92
2. BASE
3. COLLECTOR
Features
High voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 625 mW
Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
RJA Thermal Resistance, junction to Ambient 200 /mW
RJC Thermal Resistance, unction to Case 83.3 /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=10V, IC=1mA 60
DC current gain hFE(2) VCE=10V, IC=10mA 80 250
hFE(3) VCE=10V, IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V
Transition frequency fT VCE=20V, IC=10mA,f=30MHZ 50 MHz
CLASSIFICATION OF hFE(2)
Rank A B1 B2 C
Range 80-100 100-150 150-200 200-250
A42(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
A42(NPN)
TO-92 Bipolar Transistors