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SEMICONDUCTOR KRC860U~KRC864U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES B1
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS
Simplify Circuit Design. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Reduce a Quantity of Parts and Manufacturing Process. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
High Packing Density.
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) H _
0.9 + 0.1
H
T T 0.15+0.1/-0.05
C 6 5 4
G
R1
B Q1 1. Q1 EMITTER
2. Q1 BASE
Q2
3. Q2 COLLECTOR
4. Q2 EMITTER
5. Q2 BASE
6. Q1 COLLECTOR
E 1 2 3
US6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC * 200 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA * Total Rating.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC860U - 4.7 -
KRC861U - 10 -
Input Resistor KRC862U R1 - 100 - k
KRC863U - 22 -
KRC864U - 47 -
Note : * Characteristic of Transistor Only.
6 5 4
Marking
Lot No.
MARK SPEC
Type Name
TYPE KRC860U KRC861U KRC862U KRC863U KRC864U
MARK NK NM NN NO NP
1 2 3
2008. 9. 23 Revision No : 4 1/4
KRC860U~KRC864U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC860U - 0.025 -
KRC861U - 0.03 -
Rise Time KRC862U tr - 0.3 -
KRC863U - 0.06 -
KRC864U - 0.11 -
KRC860U - 3.0 -
KRC861U VO=5V - 2.0 -
Switching
Storage Time KRC862U tstg VIN=5V - 6.0 - S
Time
KRC863U RL=1k - 4.0 -
KRC864U - 5.0 -
KRC860U - 0.2 -
KRC861U - 0.12 -
Fall Time KRC862U tf - 2.0 -
KRC863U - 0.9 -
KRC864U - 1.4 -
2008. 9. 23 Revision No : 4 2/4
KRC860U~KRC864U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC860U KRC860U
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC861U KRC861U
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC862U KRC862U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 4 3/4
KRC860U~KRC864U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC863U KRC863U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC864U KRC864U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 4 4/4