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Preliminary Technical Information

TrenchMVTM IXTH180N10T VDSS = 100 V
Power MOSFET IXTQ180N10T ID25 = 180 A
RDS(on) 6.4 m
N-Channel Enhancement Mode
TO-247 (IXTH)
Avalanche Rated

Symbol Test Conditions Maximum Ratings
G
D (TAB)
VDSS TJ = 25