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BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 -- 26 January 2009 Product data sheet

1. Product profile

1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.

1.2 Features and benefits
AEC Q101 compliant Suitable for standard level gate drive
Avalanche robust Suitable for thermally demanding
environment up to 175