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SEMICONDUCTOR KMB035N40DC
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
A K
characteristics. It is mainly suitable for Back-light Inverter and power C D L
DIM MILLIMETERS
_
A 6.60 + 0.20
Supply. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
G 0.96 MAX
FEATURES H 0.90 MAX
H
J J _
1.80 + 0.20
VDSS=40V, ID=35A. E
_
G N K 2.30 + 0.10
Low Drain to Source On-state Resistance. L _
0.50 + 0.10
F F M M _
0.50 + 0.10
: RDS(ON)=17.5m (Max.) @ VGS=10V N 0.70 MIN
O 0.1 MAX
: RDS(ON)=27.0m (Max.) @ VGS=4.5V
1 2 3
1. GATE
2. DRAIN
3. SOURCE
O
MAXIMUM RATING (Ta=25 Unless otherwise Noted) DPAK (1)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain to Source Voltage VDSS 40 V
Marking
Gate to Source Voltage VGSS 20 V Type Name
DC@TC=25 (Note1) ID 35
Drain Current A
Pulsed (Note2) IDP 140 KMB
@TC=25 (Note1) 42 035N40
Lot No
Drain Power Dissipation PD W DC
@Ta=25 (Note2) 3.1
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case (Note1) RthJC 3.0 /W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
D 2
2
1 3
1 3
G S
2010. 4. 9 Revision No : 0 1/4
KMB035N40DC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 40 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1 - 3 V
VGS=10V, ID=18A (Note3) - 14.0 17.5
Drain to Source On Resistance RDS(ON) m
VGS=4.5V, ID=16A (Note3) - 20.0 27.0
Forward Transconductance gfs* VDS=5V, ID=18A (Note3) - 35 - S
Dynamic
Input Capaclitance Ciss - 524 -
Ouput Capacitance Coss VDS=20V, f=1MHz, VGS=0V - 103 - pF
Reverse Transfer Capacitance Crss - 51 -
Gate Resistance Rg f=1MHz - 2.4 -
VGS=10V Qg - 12.2 -
Total Gate Charge
VGS=5V Qg - 6.3 -
VDS=20V, VGS=10V, ID=18A (Note3) nC
Gate to Source Charge Qgs - 1.9 -
Gate to Drain Charge Qgd - 3.3 -
Turn-On Delat Time td(on) - 16 -
Turn-On Rise Time tr VDD=20V, VGS=10V - 18 -
ns
Turn-Off Deley Time td(off) ID=18A, RG=6 (Note3) - 52 -
Turn-Off Fall Time tf - 13 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 35 - A
Rulsed Source Current ISP - - 140 - A
Source to Drain Forward Voltage VSD VGS=0V, IS=3A (Note3) - 0.8 1.2 V
Reverse Recovery time trr IS=18A, dI/dt=100A/ - 22 - ns
Reverse Recovered Charge Qrr IS=18A, dI/dt=100A/ - 8.6 - nC
Note3) Pulse Test : Pulse width <300 , Duty cycle < 2%
2010. 4. 9 Revision No : 0 2/4
KMB035N40DC
2010. 4. 9 Revision No : 0 3/4
KMB035N40DC
2010. 4. 9 Revision No : 0 4/4