am1011,075.pdf part of ST am1011,075 am1011,075.pdf, . Electronic Components Datasheets Active components Transistors ST am1011,075.pdf text manual preview

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AM1011-075
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS

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. REFRACTORY/GOLD METALLIZATION

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EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY

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LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

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OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 75 W MIN. WITH 9.2 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed

ORDER CODE BRANDING
AM1011-075 1011-75

DESCRIPTION PIN CONNECTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPACTM Her-
1. Collector 3. Emitter
metic M etal/Ceramic package with i nternal
Input/Output matching structures. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (T case = 25