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SEMICONDUCTOR KQ9N50P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
TENTATIVE
switching time, low on resistance, low gate charge and excellent KQ9N50P
avalanche characteristics. It is mainly suitable for electronic ballast and A
O
switching mode power supplies. C
F
E G DIM MILLIMETERS
FEATURES B
A _
9.9 + 0.2
B 15.95 MAX
VDSS(Min.)= 500V, ID= 9A Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V E _
3.6 + 0.2
K P F _
2.8 + 0.1
Qg(typ.) =29.5nC G 3.7
M
L
H 0.5+0.1/-0.05
J I 1.5
*Target EAS = 360 mJ(min) D _
J 13.08 + 0.3
H K 1.46
MAXIMUM RATING (Tc=25 ) N N
L _
1.4 + 0.1
M _
1.27 + 0.1
RATING N _
2.54 + 0.2
CHARACTERISTIC SYMBOL UNIT O _
4.5 + 0.2
KQ9N50P KQ9N50F P _
2.4 + 0.2
1 2 3 1. GATE
2. DRAIN Q _
9.2 + 0.2
Drain-Source Voltage VDSS 500 V 3. SOURCE
Gate-Source Voltage VGSS 30 V
@TC=25 9 9* TO-220AB
ID
Drain Current @TC=100 5.4 5.4* A
KQ9N50F
Pulsed (Note1) IDP 36 36*
A C
Single Pulsed Avalanche Energy
EAS 200 mJ
(Note 2)
F
S
P
Repetitive Avalanche Energy MILLIMETERS
EAR 4 mJ E DIM
(Note 1) B A _
10.0 + 0.3
B _
G
15.0 + 0.3
Peak Diode Recovery dv/dt C _
2.70 + 0.3
dv/dt 4.5 V/ns
(Note 3) D 0.76+0.09/-0.05
E 3.2 +0.2
_
Drain Power Tc=25 135 44 W L L F _
3.0 + 0.3
K
R
PD G _
12.0 + 0.3
Dissipation Derate above25 1.07 0.35 W/ M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
Maximum Junction Temperature Tj 150 K _
3.7 + 0.2
L 1.2+0.25/-0.1
Storage Temperature Range Tstg -55 150 N N H
M 1.5+0.25/-0.1
N _
2.54 +0.1
P _
6.8 + 0.1
Thermal Characteristics _
Q 4.5 + 0.2
R _
2.6 + 0.2
Thermal Resistance, Junction-to-Case RthJC 0.93 2.86 /W 0.5 Typ
Q
1 2 3 S
1. GATE
Thermal Resistance, Junction-to- 2. DRAIN
RthJA 62.5 62.5 /W 3. SOURCE
Ambient
* : Drain current limited by maximum junction temperature. TO-220IS
PIN CONNECTION
D
G
S
2010. 5. 25 Revision No : 1 1/7
KQ9N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.57 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 0.65 0.8
Dynamic
Total Gate Charge Qg - 29.5 35
VDS=400V, ID=9A
Gate-Source Charge Qgs - 5.9 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 14 -
Turn-on Delay time td(on) - 26 -
VDD=200V, ID=9A
Turn-on Rise time tr - 35 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 90 -
VGS=10V
Turn-off Fall time tf - 40 -
Input Capacitance Ciss - 1389 1805
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 120 - pF
Reverse Transfer Capacitance Crss - 12.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 9
VGS Pulsed Source Current ISP - - 36
Diode Forward Voltage VSD IS=9A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=9A, VGS=0V, - 350 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 3.3 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 4.6mH, IS=9A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 9A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KQ9N50
KQ9N50
F 001 2
P 001 2
1 PRODUCT NAME
2 LOT NO
2010. 5. 25 Revision No : 1 2/7
KQ9N50P/F
Fig1. ID - VDS Fig2. ID - VGS
VGS
TOP : 15.0 V VGS = 10V
10.0 V
8.0 V
Drain Current ID (A)
Drain Current ID (A)
7.0 V 1
1 VGS = 7V 10
10 6.0 V
5.5 V
5.0 V 150 C
Bottom : 4.5 V
VGS = 5V 0 25 C
0 10
10
-55 C
-1 -1
10 10
-1 0 1
10 10 10 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 2.0
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250