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PBSS301PD
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 03 -- 17 December 2007 Product data sheet




1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS301ND.

1.2 Features
I Very low collector-emitter saturation resistance
I Ultra low collector-emitter saturation voltage
I 4 A continuous collector current
I Up to 15 A peak current
I High efficiency due to less heat generation

1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -20 V
IC collector current [1] - - -4 A
ICM peak collector current single pulse; - - -15 A
tp 1 ms
RCEsat collector-emitter saturation IC = -4 A; [2] - 50 70 m
resistance IB = -400 mA

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300