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Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B
Isolated version of BUK453-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK473 -100A -100B
device is intended for use in Switched VDS Drain-source voltage 100 100 V
Mode Power Supplies (SMPS), ID Drain current (DC) 9 8 A
motor control, welding, DC/DC and Ptot Total power dissipation 25 25 W
AC/DC converters, and in general RDS(ON) Drain-source on-state 0.16 0.2
purpose switching applications. resistance

PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
case

1 gate

2 drain
g
3 source
case isolated
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 100 V
VDGR Drain-gate voltage RGS = 20 k - 100 V