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STD15NF10
N-channel 100 V, 0.060 , 23 A, DPAK
low gate charge STripFETTM II Power MOSFET

Features
Type VDSSS RDS(on) max ID

STD15NF10 100 V < 0.065 23 A
3
1
Exceptional dv/dt capability
100% avalanche tested
DPAK
Application oriented characterization

Application
Switching applications
Figure 1. Internal schematic diagram
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.




Table 1. Device summary
Order code Marking Package Packaging

STD15NF10T4 D15NF10 DPAK Tape and reel




November 2008 Rev 6 1/13
www.st.com 13
Contents STD15NF10


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12




2/13
STD15NF10 Electrical ratings


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20 k) 100 V
VGS Gate-source voltage