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SEMICONDUCTOR KF13N50P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF13N50P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 13A
Drain-Source ON Resistance :
RDS(ON)=0.44 (Max) @VGS = 10V
Qg(typ.) = 35nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KF13N50P KF13N50F
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 13 13*
ID
Drain Current @TC=100 8 8* A
KF13N50F
Pulsed (Note1) IDP 40 40*
Single Pulsed Avalanche Energy EAS 860 mJ
(Note 2)
Repetitive Avalanche Energy EAR 19.5 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 208 49.8 W
PD
Dissipation Derate above 25 1.66 0.4 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.6 2.51 /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
EQUIVALENT CIRCUIT
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KF13N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.63 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=6.5A - 0.35 0.44
Dynamic
Total Gate Charge Qg - 35 -
VDS=400V, ID=13A
Gate-Source Charge Qgs - 9 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 13 -
Turn-on Delay time td(on) - 28 -
VDD=250V
Turn-on Rise time tr - 45 -
ID=13A ns
Turn-off Delay time td(off) - 105 -
RG=25 (Note4,5)
Turn-off Fall time tf - 55 -
Input Capacitance Ciss - 1700 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 210 - pF
Reverse Transfer Capacitance Crss - 15 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 13
VGS Pulsed Source Current ISP - - 52
Diode Forward Voltage VSD IS=13A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=13A, VGS=0V, - 360 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=6.0mH, IS=13A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 13A, dI/dt 200A/ s, VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 s, Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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