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Si2312DS
Vishay Siliconix
N-Channel 20 -V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D 1.8-V Rated
VDS (V) rDS(on) (W) ID (A) Qg (Typ) D RoHS Compliant
Pb-free
0.033 @ VGS = 4.5 V 4.9
Available
20 0.040 @ VGS = 2.5 V 4.4 11.2
0.051 @ VGS = 1.8 V 3.9
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2312DS (C2)*
*Marking Code
Ordering Information: Si2312DS-T1
Si2312DS-T1--E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS "8
TA= 25_C 4.9 3.77
Continuous Drain Current (TJ = 150_C)a ID
TA= 70_C 3.9 3.0
A
Pulsed Drain Currentb IDM 15
Avalanche Currentb IAS 15
L = 0 1 mH
0.1
Single Avalanche Energy EAS 11.25 mJ
Continuous Source Current (Diode Conduction)a IS 1.0 A
TA= 25_C 1.25 0.75
Power Dissipationa PD W
TA= 70_C 0.80 0.48
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 5 sec 75 100
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 120 166 C/W
_C/W
Maximum Junction-to-Foot Steady State RthJF 40 50
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71338 www.vishay.com
S-50574--Rev. E, 04-Apr-05 1
Si2312DS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.45 0.65 0.85
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
VDS = 20 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20 V, VGS = 0 V, TJ = 70_C 75
On-State Drain Currenta ID(on) VDS w 10 V, VGS = 4.5 V 15 A
VGS = 4.5 V, ID = 5.0 A 0.027 0.033
Drain-Source On-Resistancea
S O rDS(on) VGS = 2.5 V, ID = 4.5 A 0.033 0.040 W
VGS = 1.8 V, ID = 4.0 A 0.042 0.051
Forward Transconductancea gfs VDS = 15 V, ID = 5.0 A 40 S
Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 11.2 14.0
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.4 nC
Gate-Drain Charge Qgd 2.2
Switching
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = 10 V, RL = 10 W 40 60
Turn-Off Delay Time td(off) ID ^ 1.0 A, VGEN = 4.5 V, Rg = 6 W 48 70 ns
Fall-Time tf 31 45
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 13 25
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
15 15
VGS = 4.5 thru 2.0 V
12 12
I D - Drain Current (A)
I D - Drain Current (A)
1.5 V
9 9
6 6
TC = 125_C
3 3
0.5 V 25_C
1.0 V -55_C
0 0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71338
2 S-50574--Rev. E, 04-Apr-05
Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.15
1500
0.12
r DS(on) - On-Resistance ( W )
1200
C - Capacitance (pF)
0.09 Ciss
VGS = 1.8 V 900
0.06 VGS = 2.5 V
600
0.03
VGS = 4.5 V 300 Coss
Crss
0.00
0 3 6 9 12 15 0
0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
8 1.6
VDS = 10 V VGS = 4.5 V
V GS - Gate-to-Source Voltage (V)
ID = 5.0 A ID = 5.0 A
1.4
6
rDS(on) - On-Resiistance
(Normalized)
1.2
4
1.0
2
0.8
0 0.6
0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
10
ID = 5.0 A
r DS(on) - On-Resistance ( W )
TJ = 150_C 0.15
I S - Source Current (A)
1
0.10
TJ = 25_C
0.1
0.05
0.01 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71338 www.vishay.com
S-50574--Rev. E, 04-Apr-05 3
Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.2 12
0.1 10
ID = 250 mA
V GS(th) Variance (V)
-0.0 8
Power (W)
TA = 25_C
-0.1 6
-0.2 4
-0.3 2
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71338.
www.vishay.com Document Number: 71338
4 S-50574--Rev. E, 04-Apr-05
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Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1