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2SD1781K
SOT-23-3L Transistor(NPN)

SOT-23-3L
1. BASE
2. EMITTER 2.92
0.35
3. COLLECTOR 1.17




Features
2.80 1.60


Low voltage
High saturation current capability
0.15
1.90



MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V

Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 5 V

Collector cut-off current ICBO VCB=20V,IE=0 0.5 A

Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A

DC current gain hFE(1) VCE=3V,IC=100mA 120 390

Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V

Transition frequency fT VCE=5V,IC=50mA,f=100MHz 150 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 10 pF



CLASSIFICATION OF hFE(1)
Rank Q R

Range 120-270 180-390

Marking AFQ AFR
2SD1781K
SOT-23-3L Transistor(NPN)


Typical Characteristics
2SD1781K
SOT-23-3L Transistor(NPN)