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2SD1781K
SOT-23-3L Transistor(NPN)
SOT-23-3L
1. BASE
2. EMITTER 2.92
0.35
3. COLLECTOR 1.17
Features
2.80 1.60
Low voltage
High saturation current capability
0.15
1.90
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A
DC current gain hFE(1) VCE=3V,IC=100mA 120 390
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V
Transition frequency fT VCE=5V,IC=50mA,f=100MHz 150 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 10 pF
CLASSIFICATION OF hFE(1)
Rank Q R
Range 120-270 180-390
Marking AFQ AFR
2SD1781K
SOT-23-3L Transistor(NPN)
Typical Characteristics
2SD1781K
SOT-23-3L Transistor(NPN)