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SEMICONDUCTOR KRC281U~KRC286U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min) E
M B M
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) DIM MILLIMETERS
A _
2.00 + 0.20
Low on resistance : Ron=1 (Typ.) (IB=5mA) D
2 B _
1.25 + 0.15
With Built-in Bias Resistors. _
A
C 0.90 + 0.10
J
1 3
G
D 0.3+0.10/-0.05
Simplify Circuit Design. _
E 2.10 + 0.20
Reduce a Quantity of Parts and Manufacturing Process. G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
EQUIVALENT CIRCUIT L 0.70
C
H
L
M 0.42
N 0.10 MIN
C N
K
N
R1 1. EMITTER
B 2. BASE
3. COLLECTOR
E USM
MAXIMUM RATING (Ta=25