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MMBTA56WT1G
Driver Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1 http://onsemi.com
ESD Rating: Human Body Model - 4 kV
Machine Model - 400 V
COLLECTOR
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 2
EMITTER
Collector - Emitter Voltage
- VCEO -
-80 Vdc
Collector - Base Voltage
- VCBO -
-80 Vdc
Emitter - Base Voltage
- VEBO -
-4.0 Vdc
3
Collector Current - Continuous
- IC -
-500 mAdc
1
THERMAL CHARACTERISTICS 2
Characteristic Symbol Max Unit
Total Device Dissipation FR- Board
-5 PD 150 mW
TA = 25C SC- 70 (SOT- 323)
- -
CASE 419
Thermal Resistance, Junction to Ambient RJA 833 C/W STYLE 3
Junction and Storage Temperature TJ, Tstg - 55 to +150
- C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
MARKING DIAGRAM
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
FM M G
G
1
FM = Device Code
M = Date Code*
G = Pb-
-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBTA56WT1G SC--70 3000/Tape & Reel
(Pb-
-Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 2 MMBTA56WT1/D
MMBTA56WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
-
Collector - Emitter Breakdown Voltage (Note 1) V(BR)CEO -80
- -
- Vdc
(IC = -
-1.0 mAdc, IB = 0)
-
Emitter - Base Breakdown Voltage V(BR)EBO -4.0
- -
- Vdc
(IE = -
-100 mAdc, IC = 0)
Collector Cutoff Current ICES -
- -
-0.1 mAdc
(VCE = -
-60 Vdc, IB = 0)
Collector Cutoff Current ICBO mAdc
(VCB = -
-60 Vdc, IE = 0) -
- -
-
(VCB = -
-80 Vdc, IE = 0) -
- -
-0.1
ON CHARACTERISTICS
DC Current Gain hFE -
-
(IC = -
-10 mAdc, VCE = -
-1.0 Vdc) 100 -
-
(IC = -
-100 mAdc, VCE = --1.0 Vdc) 100 -
-
-
Collector - Emitter Saturation Voltage VCE(sat) -
- -
-0.25 Vdc
(IC = -
-100 mAdc, IB = --10 mAdc)
-
Base - Emitter On Voltage VBE(on) -
- -
-1.2 Vdc
(IC = --100 mAdc, VCE = -
-1.0 Vdc)
SMALL- SIGNAL CHARACTERISTICS
-
- -
Current - Gain - Bandwidth Product (Note 2) fT 50 -
- MHz
(IC = --100 mAdc, VCE = -
-1.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-- ON TIME TURN-- OFF TIME
- 1.0 V VCC +VBB VCC
+40 V +40 V
5.0 ms 100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns * CS < 6.0 pF * CS < 6.0 pF
5.0 mF 5.0 mF
100 100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
MMBTA56WT1G
f T , CURRENT-- GAIN - BANDWIDTH PRODUCT (MHz
200 100
VCE = - 2.0 V TJ = 25C
70
TJ = 25C
50 Cibo
100
C, CAPACITANCE (pF)
30
70
20
50
10 Cobo
30
7.0
20 5.0
- 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 0.1 - 0.2 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current-
-Gain -- Bandwidth Product Figure 3. Capacitance
1.0 k - 1.0 k
700 - 700 100 ms
500 - 500
I C , COLLECTOR CURRENT (mA) 1.0 ms
ts
300 - 300 1.0 s
200 - 200 TC = 25C
t, TIME (ns)
TA = 25C
100 - 100
70 tf - 70
50 - 50 CURRENT LIMIT
VCC = - 40 V THERMAL LIMIT
30 IC/IB = 10 - 30
SECOND BREAKDOWN LIMIT
20 IB1 = IB2 - 20
TJ = 25C td @ VBE(off) = - 0.5 V tr
10 - 10
- 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Time
Figure 5. Active-
-Region Safe Operating Area
400 - 1.0
TJ = 25C
TJ = 125C
VCE = - 1.0 V - 0.8 VBE(sat) @ IC/IB = 10
200
h FE, DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25C
- 0.6
VBE(on) @ VCE = - 1.0 V
- 55C
100 - 0.4
80
60 - 0.2
VCE(sat) @ IC/IB = 10
40 0
- 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 - 500 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 - 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain Figure 7. "ON" Voltages
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3
MMBTA56WT1G
VCE , COLLECTOR-- EMITTER VOLTAGE (VOLTS)
- 1.0 - 0.8
R VB , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
- 0.8 - 1.2
IC = IC = IC = IC =
- 50 mA - 100 mA - 250 mA - 500 mA
- 0.6 - 1.6
- 0.4 - 2.0 RVB for VBE
IC =
- 0.2 - 10 mA - 2.4
0 - 2.8
- 0.05 - 0.1 - 0.2 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 - 500
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region Figure 9. Base-
-Emitter Temperature
Coefficient
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MMBTA56WT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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