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EMT1
General purpose transistors (dual digital transistors)

SOT-563
FEATURES
Two 2SA1037AK chips in a package
Mounting possible with SOT-563 automatic mounting machines
Transistor elements are independent,eliminating interference 1

Marking: T1
(3) (2) (1)

Equivalent circuit
Tr1
Tr2

(4) (5) (6)

Absolute maximum ratings (Ta=25)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -6 V

Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A

Emitter cut-off current IEBO VEB=-7V, IC=0 -0.1 A

DC current gain hFE VCE=-6V, IC=-1mA 120 560

Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V

Transition frequency fT VCE=-12V, IC=-2mA, f=100MHz 140 MHz

Output capacitance Cob VCB=-12V, IE=0, f=1MHz 5 pF

1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05