Text preview for : bu407.pdf part of Samsung bu407 . Electronic Components Datasheets Active components Transistors Samsung bu407.pdf
Back to : bu407.pdf | Home
BU407/407H NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TO-220
USE IN HORIZONTAL DEFLECTION
OUTPUT STAGE
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 330 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 7 A 1.Base 2.Collector 3.Emitter
Collector Peck Current ICM 10 A
Base Current IB 4 A
Collector Dissipation ( T C=25 ) PC 60 W
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Cutoff Current (VBE=0) ICES VCE = 330V, VBE = 0 5 mA
VCE = 200V, VBE = 0 100 uA
VCE = 200V, VBE = 0, T C = 150 1 mA
Emitter Cutoff Current (IC=0) IEBO VBE = 6V, IC = 0 1 mA
Collector Emitter Saturation Voltage
: BU407 VCE(sat) IC = 5A, IB = 0.5A 1 V
: BU407H IC = 5A, IB = 0.8A 1 V
Base Emitter Saturation Voltage
: BU407 VBE(sat) IC = 5A, IB = 0.5A 1.2 V
: BU407H IC = 5A, IB = 0.8A 1.2 V
Current Gain- Bandwidth Product fT VCE = 10V, IC = 0.5A 10 MHz
Turn-off Time : BU407 toff IC = 5A, IB = 0.5A 0.75 uS
: BU407H IC = 5A, IB = 0.8A 0.4 uS
BU407/407H NPN EPITAXIAL SILICON TRANSISTOR