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Philips Semiconductors Product specification

PowerMOS Transistor BUK563-80B
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope. VDS Drain-source voltage 80 V
The device is intended for use in ID Drain current (DC) 16 A
Switched Mode Power Supplies Ptot Total power dissipation 75 W
(SMPS), motor control, welding, Tj Junction temperature 175