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CEP6601/CEB6601
CEF6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -19A, RDS(ON) = 86m @VGS = -10V.
RDS(ON) = 125m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. D
Lead free product is acquired.
D
G
G G
G D D
S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS