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STB40NF10L
N-channel 100V - 0.028 - 40A - D2PAK
Low gate charge STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STB40NF10L 100V <0.033 40A
Exceptional dv/dt capability
100% avalanche tested
3
Application oriented characterization 1
D2PAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high- Internal schematic diagram
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Order codes
Part number Marking Package Packaging
2PAK
STB40NF10L B40NF10L D Tape & reel
June 2006 Rev 2 1/13
www.st.com 13
Contents STB40NF10L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB40NF10L Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20 k) 100 V
VGS Gate- source voltage