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Philips Semiconductors 800MHz PA Driver with BFG21W




800MHz PA Driver with BFG21W

Application Note
JL-9803v2


Author

Jarek Lucek

November 8, 1998


Discrete Semiconductors - Mansfield
171 Forbes Blvd.
Mansfield, MA 02048




Abstract
th
BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver
applications in AMPS, TDMA, CDMA and GSM systems. BFG21W's performance is superior at 800MHz,
3.0V applications. Under CW mode, the part is capable of P1dB=25dBm, efficiency of 70% and Gp of 17dB.
BFG21W delivers 23dBm of linear output power under TDMA with Gp of 18dB and efficiency of over 50%.
Under CDMA mode, BFG21W delivers 19dBm of linear output power with G of 19 dB and efficiency of
p
35%.
Philips Semiconductors 800MHz PA Driver with BFG21W

INTRODUCTION

BFG21W is Philips Semiconductors' 5th generation silicon bipolar RF wideband transistor in
SOT343R plastic SMD package. The transistor delivers superior performance at frequencies
below 3 GHz. It is manufactured according to the double poly process and characterised by high
transition frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes
describes BFG21W performance at 800MHz operation under CW, 2 Tone, TDMA and CDMA
conditions.


PERFORMANCE OVERVIEW

The table below summarises BFG21W performance capabilities under different modes of
operation.

P1dB or Plinear* Gain** Efficiency***
System Vsupply
dBm dB %
Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA

3.0 Volts 24 24.5 18 18.2 66 68
CW 3.5 Volts 24.5 25 18.8 19 60 63
3.0 Volts 19 19 19 19.5 43 41
2Tone 3.5 Volts 20.5 20.5 19.5 19.9 43 40
3.0 Volts 21 23 18.9 18.2 48 60
TDMA 3.5 Volts 23 24 19.4 18.8 52 57
3.0 Volts 17 19 18.8 19 33 39
CDMA 3.5 Volts 19.5 20 19.2 19.5 35 38
Table 1: BFG21W 800MHz PA driver performance summary

*- CW - load power @ P1dB
2Tone - load power represents linear average power @ IMD levels reaching