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MMBT58 9
TRANSISTOR(PNP) SOT-23
FEATURES
High current surface mount PNP silicon switching transistor for
Load management in portable applications
1. BASE
MARKING :589 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 310 mW
RJA Thermal Resistance, junction to Ambient 403 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A
Collector-emitter cut-off current ICES VCES=-30V -0.1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A
hFE1 VCE=-2V,IC=-1mA 100
hFE2 VCE=-2V,IC=-500mA 100 300
DC current gain
hFE3 VCE=-2V,IC=-1A 80
hFE4 VCE=-2V,IC=-2A 40
VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V
Collector-emitter saturation voltage VCE(sat)2 IC= -1A, IB=-100mA -0.3 V
VCE(sat)3 IC= -2A, IB=-200mA -0.65 V
Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100mA -1.2 V
Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V
VCE=-5V, IC=-100mA ,
Transition frequency fT 100 MHz
f =100MHz
Collector Output Capacitance Cob f=1MHz 15 pF
1
JinYu www.htsemi.com
semiconductor
Date:201/5
MMBT58 9
2
JinYu www.htsemi.com
semiconductor
Date:201/5