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PolarHVTM HiPerFET IXFR 32N80P VDSS = 800 V
Power MOSFET ID25 = 20 A
RDS(on) 290 m
ISOPLUS247TM
trr 250 ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR)
E153432
VDSS TJ = 25