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SEMICONDUCTOR KTC3204
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES B
Complementary to KTA1272.
A
O DIM MILLIMETERS
F
A 3.20 MAX
H M B 4.30 MAX
MAXIMUM RATING (Ta=25 ) C 0.55 MAX
D _
2.40 + 0.15
G
E 1.27
CHARACTERISTIC SYMBOL RATING UNIT F 2.30
C _
G 14.00+ 0.50
Collector-Base Voltage VCBO 35 V H 0.60 MAX
J 1.05
Collector-Emitter Voltage VCEO 30 V E E
K 1.45
L 25
Emitter-Base Voltage VEBO 5 V M 0.80
J
D
1 2 3 N N 0.55 MAX
K
Collector Current IC 800 mA O 0.75
L
Emitter Current IE -800 mA 1. EMITTER
PC 2. COLLECTOR
Collector Power Dissipation 400 mW
3. BASE
Junction Temperature Tj 150