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2SC2001(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
High hFE and low VCE(sat)
hFE(IC=100mA) : 200(Typ)
VCE(sat)(700mA): 0.2V (Typ)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS(TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 700 mA
PC Collector Power Dissipation 600 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100