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DISCRETE SEMICONDUCTORS

DATA SHEET

BU4508AF
Silicon Diffused Power Transistor
Product specification June 1998
Supersedes data of January 1998
File under Discrete Semiconductors, SC06
Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4508AF

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths 25