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PSMN003-30P; PSMN003-30B
N-channel enhancement mode field-effect transistor
Rev. 01 -- 23 October 2001 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOSTM1 technology.
Product availability:
PSMN003-30P in SOT78 (TO-220AB)
PSMN003-30B in SOT404 (D2-PAK)
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb d
2 drain (d) [1]
3 source (s)
g
mb drain (d)
MBB076 s
2
1 3 MBK116
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors PSMN003-30 series
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175